| PART |
Description |
Maker |
| K6T1008C2C K6T1008C2C-RB55 K6T1008C2C-RB70 K6T1008 |
128K X 8 STANDARD SRAM, 70 ns, PDSO32
128K x8 bit Low Power CMOS Static RAM 128K的x8位低功CMOS静态RAM
128K x8 bit Low Power CMOS Static RAM 128K的x8位低功耗CMOS静态RAM
55/70ns; V(cc): 4.5 to 5.5V; 128 x 8-bit low power CMOS static RAM
55ns; 128 x 8-bit low power CMOS static RAM
70ns; 128 x 8-bit low power CMOS static RAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
| HT23C010 23C010 |
From old datasheet system
CMOS 128K x 8-Bit Mask ROM(CMOS 128K x 8位掩模式ROM) 的CMOS 128K的8位掩模ROM28K的的CMOS × 8位掩模式光盘
CMOS 128K 8-Bit Mask ROM
CMOS 128K? 8-Bit Mask ROM
CMOS 128K′ 8-Bit Mask ROM
|
Holtek Semiconductor, Inc.
HOLTEK[Holtek Semiconductor Inc]
|
| BS616LV2017 BS616LV2017EIP70 BS616LV2017AC BS616LV |
Very Low Power/Voltage CMOS SRAM 128K X 16 bit
Very Low Power/Voltage CMOS SRAM 128K X 16 bit 非常低功电压CMOS SRAM28K的16
FF-SR2 Series, Two-hand Control, 24 Vdc 非常低功电压CMOS SRAM28K的16
LM49370 Audio Sub-System with an Ultra Low EMI, Spread Spectrum, Class D Loudspeaker Amplifier, a Dual-Mode Stereo Headphone Amplifier, and a Dedicated PCM Interface for Bluetooth Transceivers
Marine Lamp, 4 in x 6 in [101,6 mm x 152,4 mm], Wide Flood Beam Pattern, 12 Vdc/50 W/4 A, Flush mounting
Asynchronous 2M(128Kx16) bits Static RAM
|
Brilliance Semiconducto...
Honeywell International, Inc.
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
| LY62L12816 LY62L12816E LY62L12816GL LY62L12816GV L |
128K X 16 BIT LOW POWER CMOS SRAM
|
Lyontek Inc.
|
| LY62W1024 LY62W1024E LY62W1024GL LY62W1024GV LY62W |
128K X 8 BIT LOW POWER CMOS SRAM
|
Lyontek Inc.
|
| EM620FU16 |
128K x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions
|
| EM613FP16AS-70LF EM643FP16AS-70LF EM613FP16AS-70LL |
128K x16 bit Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions Inc
Emerging Memory & Logic...
|
| STC62WV12816 |
Very Low Power/Voltage CMOS SRAM 128k X 16 bit
|
STC
|
| BS616UV2019AIP10 BS616UV2019DIG10 |
Ultra Low Power CMOS SRAM 128K X 16 bit
|
Brilliance Semiconducto...
|
| BS616LV2011 BS616LV2011AC BS616LV2011AI BS616LV201 |
Very Low Power/Voltage CMOS SRAM 128K X 16 bit
|
BSI[Brilliance Semiconductor]
Brilliance Semiconducto...
|
| BS616UV2011TI BS616UV2011EI BS616UV2011 BS616UV201 |
Ultra Low Power/Voltage CMOS SRAM 128K X 16 bit
|
Brilliance Semiconducto...
BSI[Brilliance Semiconductor]
|
| MX27C1000PI-70 MX27C1000QI-70 MX27C1000MI-55 MX27C |
Single Output LDO, 3.0A, Fixed(1.8V), Fast Transient Response, Low Quiescent Current 5-TO-220 -40 to 125
Single Output LDO, 3.0A, Fixed(2.5V), Fast Transient Response, Low Quiescent Current 5-TO-220 -40 to 125
FPGA - 200000 SYSTEM GATE 2.5 VOLT - NOT RECOMMENDED for NEW DESIGN 128K X 8 OTPROM, 90 ns, PDSO32
1M-BIT [128K x 8] CMOS EPROM 128K X 8 OTPROM, 70 ns, PQCC32
1M-BIT [128K x 8] CMOS EPROM 128K X 8 OTPROM, 120 ns, PQCC32
|
Macronix International Co., Ltd.
|
